c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . SBR13003A SBR13003A SBR13003A SBR13003A rev.a aug.2010 high voltage fast -switching npn power transistor features ? very high switching speed ? high voltage capability ? wide reverse bias soa general description this device is designed for high voltage ,high speed switching characteristics required such as lighting system,switching mode power supply. absolute maximum ratings symbol parameter test conditions value units v ces collector-emitter voltage v be =0 700 v v ceo collector -emitter voltage i b =0 400 v v ebo emitter -base voltage i c =0 9.0 v i c collector current 1.5 a i cp collector pulse current 3.0 a i b base current 0.75 a i bm base peak current t p =5ms 1.5 a p c total dissipation at tc=25 30 w t j operation junction temperature -40~150 t stg storage temperature -40~150 thermal characteristics symbol parameter value units r ? jc thermal resistance junction to case 4.16 /w r ? ja thermal resistance junction to ambient 89 /w
SBR13003A SBR13003A SBR13003A SBR13003A 2 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electrical characteristics (tc=25 unless otherwise noted) symbol parameter test conditions value units min typ max v ceo(sus) collector -emitter breakdown voltage ic=10ma,ib=0 400 - - v v ce(sat) collector-emitter saturation voltage ic=0.5a,ib=0.1a ic=1.0a,ib=0.25a ic=1.5a,ib=0.5a - - 0.3 0.5 1.0 v v be(sat) base -emitter saturation voltage ic=0.5a,ib=0.1a ic=1.0a,ib=0.25a - - 1.0 1.2 v i cbo collector-base cutoff current (vbe=-1.5v) vcb=700v vcb=700v,tc=100 - - 1.0 5.0 ma h fe dc current gain vce=2v,ic=0.5a vce=2v,ic=1.0a 10 5 - - 30 25 ton ts tf resistive resistive resistive resistive load load load load turn-on time storage time fall time v cc =125v,ic=1a i b1 =0.2a,i b2 =-0.5a t p =25 s - 0.2 1.5 0.15 1.0 3.0 0.4 s ts tf inductive inductive inductive inductive load load load load storage time fall time v cc =15v,ic=1a i b1 =0.2a,i b2 =-0.5a l=0.35mh,vclamp= 300v - - 1.2 0.12 4.0 0.3 s ts tf inductive inductive inductive inductive load load load load storage time fall time v cc =15v,ic=1a i b1 =0.2a,i b2 =-0.5a l=0.35mh,vclamp= 300v tc=100 - - 2.4 0.15 5.0 0.4 s note : pulse test :pulse width 300,duty cycle 2%
SBR13003A SBR13003A SBR13003A SBR13003A 3 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.1 dc current gain fig.2 saturation voltage fig.3 switching time fig.4 safe operation area fig.5 power derating
SBR13003A SBR13003A SBR13003A SBR13003A 4 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance resistive load switching test circuit inductive load switching & rbsoa test circuit
SBR13003A SBR13003A SBR13003A SBR13003A 5 / 5 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance to-126 to-126 to-126 to-126 package package package package dimension dimension dimension dimension dim mm lnch min. typ. max. min typ. max. a 7.5 7.9 0.295 0.311 b 10.8 11.2 0.425 0.441 c 14.2 14.7 0.559 0.579 d 2.7 2.9 0.106 0.114 e 3.8 0.150 f 2.5 0.098 g 1.2 1.5 0.047 0.059 h 2.3 0.091 i 4.6 0.181 g 0.48 0.62 0.019 0.024 h 0.7 0.86 0.028 0.034 l 1.4 0.055 3.2 0.126
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